Ana Claudia Arias

Associate Professor
Electrical Engineering and Computer Sciences
University of California Berkeley

Fields of interest

Dr. Arias’ research focuses on the use of electronic materials processed from solution in flexible electronic systems.
She uses printing techniques to design and fabricate flexible large area electronic devices and sensors.


Recent publications

T. N. Ng, B. Russo, B. Krusor, R. Kist, A. C. Arias,
Organic inkjet-patterned memory array based on ferroelectric field-effect transistors,
Organic Electronics  12, 2012-2018 (2011).

T. N. Ng, B. Russo, A. C. Arias,
Solution-Processed Memristive Junctions used in a Threshold Indicator,
IEEE Transactions on Electron Devices  58, 3435-3443 (2011).

A. M. Gaikwad, G. L. Whiting, D. A. Steingart, A. C.Arias,
Highly Flexible, Printed Alkaline Batteries Based on Mesh-Embedded Electrodes,
Advanced Materials 23, 3251–3255 (2011).

L. L. Lavery, G. L. Whiting and A. C. Arias,
All ink-jet printed polyfluorene photosensor for high illuminance detection,
Organic Electronics 12, 682-685 (2011).

A. C. Arias, J. D. MacKenzie, I. McCulloch, J. Rivnay, A. Salleo,
Materials and Applications for Large Area Electronics: Solution-Based Approaches,
Chem. Rev. 110, 3-24 (2010).

G. L. Whiting and A. C. Arias,
Chemically modified ink-jet printed silver electrodes for organic field-effect transistors,
Applied Physics Letters 95, 253302 (2009).

T. N. Ng, B. Russo, and A. C. Arias,
Degradation mechanisms of organic ferroelectric field-effect transistors used as nonvolatile memory,
Journal of Applied Physics 106, 094505 (2009).

A. Salleo and A. C. Arias,
Solution based self-assembly of an array of encapsulated polymeric thin-film transistors,
Adv. Mater. 19, 3540-3543 (2007).

A. C. Arias, J. Daniel, B. Krusor, S. Ready, V. Sholin and R. A. Street,
All additive ink-jet-printed display backplanes: Materials development and integration,
J. SID 15 (7), 485 (2007).

A. C. Arias, F. Endicott and R. A. Street,
Surface-Induced Self-Encapsulation of Polymer Thin-Film Transistors,
Adv. Mater. 18 (21), 2900 (2006).