Karl Hess

Deptartment of Electrical and Computer Engr.
University of Illinois
E-mail: k-hess@uiuc.edu
Page: http://www.beckman.uiuc.edu/faculty/hess.html

Fields of interest:

  • Molecular and Electronic Nanostructures


Recent publications (selected):

K. Hess, B. Tuttle, L. Register, D.K. Ferry:
Magnitude of the Threshold Energy for Hot Electron Damage in Metal-oxide-semiconductor Field Effect Transistors by Hydrogen Desorption

Applied Physics Letters
, 75/20, pp. 3147-3149 (1999)

I.C. Kizilyalli, K. Hess, J.W. Lyding:
Channel Hot Electron Degradation-delay in MOS Transistors Due to Deuterium Anneal
Chapter 13, The VLSI Handbook (CRC Press LLC) (1999)

J. Lee, Y. Epstein, A.C. Berti, J. Huber, K. Hess, J.W. Lyding:
The Effect of Deuterium Passivation at Different Steps of CMOS Processing on Lifetime Improve-ments of CMOS Transistors
IEEE Transactions on Electron Devices, 46, p. 1812 (1999)

M. Grupen, K. Hess:
Simulation of Carrier Transport and Nonlinearities in Quantum Well Laser Diodes
IEEE Journal of Quantum Electronics, 34/1, pp. 120-140 (1998)

K. Hess, I.C. Kizilyalli, J.W. Lyding:
Giant Isotope Effect in Hot Electron Degradation of Metal Oxide Silicon Devices
IEEE Transactions on Electron Devices, 45/2, pp. 406-416 (1998)

I.P. Ipatova, O.P. Chikalova-Luzina, K. Hess:
Effect of Localized Vibrations on the Si Surface Concentrations of H and D
Journal of Applied Physics, 83/2, pp. 814-819 (1998)