Fields of interest:
Nanoscale properties of surfaces, interfaces, thin films, crystalline nanomembranes, and dimensionally confined structures primarily of Group IV semiconductors; atom-scale mechanisms of film growth; relationship of morphology and strain to localized mechanical, electronic, optoelectronic, and photonic properties.
J.A. Rogers, M.G. Lagally, R. G. Nuzzo:
Synthesis, assembly and applications of semiconductor nanomembranes,
Nature 477, (2011), 45.
D.M. Paskiewicz, B. Tanto, D.E. Savage, and M.G. Lagally:
Defect-Free Single-Crystal SiGe: A New Material from Nanomembrane Strain Engineering,
ACS Nano 5, (2011), 5814.
M.H. Huang, F. Cavallo, Feng Liu, and M.G. Lagally:
Nanomechanical Architecture of Semiconductor Nanomembranes,
Nanoscale 3, (2011), 96.
A.M. Kiefer, D. M. Paskiewicz, A.M. Clausen, W.R. Buchwald, R. A. Soref, and M.G. Lagally:
Si/Ge Junctions Formed by Nanomembrane Bonding,
ACS Nano 5, (2011) 1179.
F. Cavallo, D. Grierson, K. Turner, and M.G. Lagally:
‘Soft’ Silicon: Mechanical Compliance of Nanomembranes,
ACS Nano 5, (2011), 5400.
Minrui Yu, Yu Huang, J.Ballweg, Hyuncheol Shin, M.H. Huang, D. E. Savage, M.G. Lagally, E.W. Dent, R.H. Blick, and J.C. Williams:
Semiconductor Nanomembrane Tubes: Three-Dimensional Confinement for Controlled Neurite Outgrowth,
ACS Nano 5, (2011), 2247.
Feng Chen, E. B. Ramayya, C. Euaruksakul, F. J. Himpsel, B.-J. Ding, I. Knezevic, and M.G. Lagally:
Quantum Confinement, Surface Roughness, and the Conduction Band Structure of Ultrathin Silicon Membranes,
ACS Nano 4, (2010), 2466.
Z. Liu, J. Wu, W. Duan, Max G. Lagally, Feng Liu:
Electronic Phase Diagram of Silicon “Strain” Superlattice,
Phys. Rev. Letters 105, (2010), 016802.
Francesca Cavallo and M. G. Lagally:
Semiconductors Turn Soft: Inorganic Nanomembranes”,
Soft Matter 6, (2010), 439.
H.-J. Kim-Lee, D.E. Savage, C.S. Ritz, M.G. Lagally, and K.T. Turner:
Control of Island Growth with Mechanically Responsive Single-Crystal Nanomembrane Substrates,
Phys. Rev. Letters 102, (2009), 226103.