John H Weaver

Professor and Head of Department
Department of Materials Science and Engineering
University of Illinois, Urbana-Champaign
E-mail: jhweaver@uiuc.edu
Page: http://jhweaver.mse.uiuc.edu/index.html

Fields of interest:

  • Surface and interface science
  • Nanostructured materials

 

Recent publications (selected):

C.M. Aldao and J.H. Weaver:
Halogen Etching of Si via Atomic-scale Processes,
Progress in Surface Science, Vol. 68, (2001), 189-230.

K.S. Nakayama, E. Graugnard and J.H. Weaver:
Surface Modification without Desorption: Recycling of Cl on Si(100)-2×1,
Phys. Rev. Lett., Vol. 88, (2002), 125508.

K.S. Nakayama, E. Graugnard and J.H. Weaver:
Tunneling-Electron-Induced Bromine Hopping on Si(100)-2×1,
Phys. Rev. Lett., Vol. 89, (2002), 266106.

G.J. Xu, E. Graugnard, V. Petrova, K.S. Nakayama and J.H. Weaver:
Dynamics of Surface Roughening of Cl-terminated Si(100)-2×1 at 700 K,
Phys. Rev. B, Vol. 67, (2003), 125320. G.J. Xu,

K.S. Nakayama, B.R. Trenhaile, C.M. Aldao and J.H. Weaver:
Equilibrium Morphologies for Cl-Roughened Si(100) at 700-750 K: Dependence on Cl Concentration,
Phys. Rev. B, Vol. 67, (2003), 125321.

G.J. Xu, E. Graugnard, B.R. Trenhaile, K.S. Nakayama and J.H. Weaver:
Atom Vacancy Lines and Surface Patterning: The Role of Stress for Br- Si(100)-(2×1) at 700 K,
Phys. Rev. B, Vol. 68, (2003), 75301.

V.N. Antonov, J.S. Palmer, A.S. Bhatti, and J.H. Weaver:
Nanostructure Diffusion and Aggregation on Desorbing Rare Gas Solids: Slip on an Incommensurate Lattice,
Phys. Rev. B, Vol. 68, (2003), 205418.


V.N. Antonov, J.S. Palmer, P.S. Waggoner, A.S. Bhatti and J.H. Weaver
:
Nanoparticle Diffusion on Desorbing Solids: The Role of Elementary Excitations in Buffer-Layer-Assisted Growth,
Phys. Rev. B, Vol. 70, (2004), 45406.

B.R. Trenhaile, V.N. Antonov, G.J. Xu, K.S. Nakayama and J.H. Weaver:
Electron Stimulated Desorption from a Surprising Source: Internal Hot Electrons for Br-Si(100)-(2×1),
Surf. Sci. Lett., 583/1, L135-L141.

K.S. Nakayama, M.M.G. Alemany, H. Kwak, T. Sugano, K. Ohmori, J.R. Chelikowsky
and J.H. Weaver
:
Electronic Structure of Si(001)-c(4×2) Analyzed by Scanning Tunneling Spectroscopy and ab initio Simulations,
Phys. Rev. B, Vol. 73, (2006), 035330.

B.R. Trenhaile, V.N. Antonov, G.J. Xu, A. Agrawal, A.W. Signor, R. Butera, K.S. Nakayama and J.H. Weaver:
Phonon-Activated, Electron-Stimulated Desorption of Halogens from Si(100)-(2×1),
Phys. Rev. B, Vol. 73, (2006), 125318.

P. Swaminathan, V.N. Antonov, J.A.N.T. Soares, J.S. Palmer and J.H. Weaver:
Cd-based II-VI Semiconductor Nanostructures Produced by Buffer Layer Assisted Growth: Structured Evolution and Photoluminescence,
Phys. Rev. B, Vol. 73, (2006), 125430.